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Highly accurate GaN HEMT model based on the Angelov model with error compensation
Highly accurate GaN HEMT model based on the Angelov model with error compensation
2020
Ziyue Zhao
Yang Lu
Hengshuang Zhang
Chupeng Yi
Yuchen Wang
Xiaohua Ma
Yue Hao
Keywords:
Electronic engineering
Mathematics
High-electron-mobility transistor
Weight function
Error function
Correction
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