IGBT Failure mechanism and boundary analysis under large current and high temperature turn-off

Considering overload working conditions in electromagnetic emission, the paper presents a simulation of IGBT turn-off under large current and high temperature. Numerous simulation result is received under a specific test circuit. Boundary conditions for temperature, current and starry inductance are obtained under a set of temperature criterion. Further analysis proves that after temperature reaches the criterion, high current density path swiftly extends from local area to a vertical current path throughout the cells. This method for IGBT theoretical boundary is useful for similar projects or working conditions.