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Acemap > Paper > Positive Threshold-Voltage Shift of Y2O3 Gate Dielectric InAlN/GaN-on-Si (111) MOSHEMTs with Respect to HEMTs

Positive Threshold-Voltage Shift of Y2O3 Gate Dielectric InAlN/GaN-on-Si (111) MOSHEMTs with Respect to HEMTs

2014 
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