Influence of sintering temperatures on microstructures and electrical properties of Bi4Ti2.95W0.05O12.05 + 0.2 wt%Cr2O3 ceramics

Abstract Sintering temperatures (1050–1150 °C) play an important role on influencing microstructures and electrical properties of Bi 4 Ti 2.95 W 0.05 O 12.05  + 0.2 wt%Cr 2 O 3 ceramics. Firstly, the lattice constants and relative density of samples varied with sintering temperatures. And the increase in sintering temperatures increased their grain size and decreased the porosity, resulting in the extreme grain growth of the sample sintered at 1150 °C. Based on these structural evolutions, ϵ r , TK ϵ and tan  δ of samples deceased with the increase in sintering temperatures, while T c , d 33 and k p increased with it. ρ dc of samples also increased with the increase in sintering temperatures below 1125 °C, but decreased sharply at 1150 °C. The variation in 2 E c of samples with sintering temperatures may be related to the 90° domain walls. The sample sintered at 1150 °C presented a lower ρ dc due to the high aspect ratio, but possessed a higher d 33 due to the large grain size.