The optoelectronic semiconductor chip, a process for producing an optoelectronic semiconductor chip and conversion element phosphor for a conversion element

It is an optoelectronic semiconductor chip with a semiconductor body (1) which is adapted to emit electromagnetic radiation of a first wavelength range of a radiation exit surface (3) indicated. In addition, the semiconductor chip comprises a ceramic or single crystal conversion plates (6) which is adapted to convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range which is different from the first wavelength range and a wavelength-bonding layer (7) (the conversion platelets connects 6) with the radiation exit surface (3), wherein the wavelength-bonding layer (7) phosphor particles (4), which are capable of converting radiation of the first wavelength range into radiation of a third wavelength range that is different from the first wavelength range and the second wavelength range , The wavelength-bonding layer (7) furthermore has a maximum thickness of 30 microns. There are provided a method for producing an optoelectronic semiconductor chip another semiconductor chip and conversion element phosphor.