DIAMOND DEPOSITION USING SURFACE WAVE SYSTEM WITH HIGH MICROWAVE POWER

ln this work we show the option for getting thin diamond films using a technique assisted by surface wave guide microwave discharge, where the generated plasma is out of the resonant cavity. This technique itself has been demonstraled to be a powerful one for basic investigation and also for many applications. The advantages of the microwave surface guide discharges compared with the conventional microwave are the plasma shell formation, low contamination allowing diamond growth out of plasma region and the energy density inside the plasma shell that was around 30% higher than inside the conventional bell jar plasma. The present paper provides lhe resulls of the parametric study of the diamond quality films as well as of the incident microwave power, internal pressure of lhe reactor, substrate position and substrate temperature. Deposition of adherent and stress free CVD diamond films will very low grain size was obtained on silicon and quartzo. The main techniques used for characterization of the films were Raman Spectroscopy and Scanning Electron Microscopy.