Material Design and Qualification on Power InGaP HBTs for 2.4 GHz Transmitter Application

To meet the requirement for today’s 2.4GHz high power circuit applications, we designed and processed high power heterojunction bipolar transistors (HBTs) . The InGaP/GaAs HBTs with current gain 52.2, BVCEO=16.1V, BVBCO=24.6V, ft=39GHz and fmax=139GHz were archieved from a 3x10µ µm 2 emitter contact. The performance meets the specifications required.