High-speed Gao.47In0.53As/InP infra-red Schottky-barrier photodiodes

We report a new high-speed InP-based Ga1−xInxAs infra-red Schottky-barrier photodiode. The photodiodes were fabricated on both p- and n-GaInAs epilayers using Schottky barrier height enhancement technology. The response speed was measured by the impulse response and autocorrelation method; the risetimes of 85ps for p-GaInAs and 180ps for n-GaInAs photodiodes were obtained, which correspond to the 3dB cutoff frequency of 2–4 GHz. The intrinsic response speed was 12GHz for n-GaInAs and 18GHz for p-GaInAs photodiodes based on SPICE simulation with measured device parameters. The photodiodes had the responsivity as high as 0.55 A/W and the quantum efficiency of up to 45% at 1.3–1.6μm without antireflection coating.