INTERACTION OF INFRARED ELECTROMAGNETIC WAVES IN RESONANT LAYERED STRUCTURES WITH n-GaAs SEMICONDUCTOR FILM

Interaction of infrared electromagnetic (EM) waves in a layered structure with n-GaAs film is investigated theoretically. An oblique incidence of EM wave is considered, when the total internal reflection and resonant transmission occur. It is demonstrated that this structure modulates effectively the infrared EM wave. The modulation mechanism is due to the transfer of electrons from the upper valley to the higher ones in a strong bias electric field. An interaction of strong incident infrared EM pulses with this structure is also considered in the case of the absence of a bias electric field. Both the nonlinear switching of short pulses and the modulation instability of long strong pulses take place.