Polarization Dependence Of Incident Angle Sensitivity In Soi Photodiode With 2d Hole Array Grating

The plenoptic imaging technique requires angle sensitive pixel (ASP) to capture the direction (θ, ϕ) of light. In this work, we experimentally demonstrate the polarization dependence of incident angle sensitivity in the silicon-on-insulator (SOI) photodiode (PD) stacked with 2D hole array grating. Measured results can be explained based on phase matching condition between the diffracted light from the grating and the SOI waveguiding mode. The theoretical prediction and the measured results show that the incident light with specific incident angle shift in the contours of the peak angle when the grating period is varied. The proposed device has potential application as image sensor pixels in lensless imaging, refocusing and depth mapping.