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A dual-gate and Γ-type field plate GaN base E-HEMT with high breakdown voltage on simulation investigation
A dual-gate and Γ-type field plate GaN base E-HEMT with high breakdown voltage on simulation investigation
2021
Jialin Li
Yian Yin
Ni Zeng
Fengbo Liao
Mengxiao Lian
Xichen Zhang
Keming Zhang
Yong Zhang
Jingbo Li
Keywords:
Breakdown voltage
High-electron-mobility transistor
Materials science
dual gate
Field (physics)
Base (exponentiation)
Optoelectronics
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