Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions

A current-injection-type semiconductor membrane distributed feedback laser consisting of a 470-nm-thick semiconductor core and bonded by a benzocyclobutene polymer on a silicon-on-insulator substrate was demonstrated for the first time by adopting a lateral current-injection structure. Room-temperature pulsed operation was achieved with a threshold current of 83 mA for a stripe width of 3.2 µm and cavity length of 420 µm.