Numerical analysis of SnS homojunction solar cell

Abstract The photovoltaic properties of SnS homojunction solar cells are simulated with different parameters of the structure, including the doping concentration and the thickness of each layer. The simulated results show that the optimum efficiency of SnS homojunction solar cell is 25.268% with 5 × 10 15  cm −3 carrier concentration of the front region and 5 × 10 16  cm −3 carrier concentration of the base, a 50 nm thick n-layer and a 950 nm thick p-layer. The effects of minority-carrier lifetime and surface recombination velocities on the performance of solar cell have also been discussed. The simulation contributes to designing and fabricating SnS solar cells.