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Efficient low temperature c-Si surface passivation using a-Si grown by PECVD
Efficient low temperature c-Si surface passivation using a-Si grown by PECVD
2003
Francesco Roca
Salvatore Bellone
G. Contento
D. Daliento
R. Fucci
Heinrich Christoph Neitzert
N. Martucciello
Annunziata Sanseverino
Luigi Zeni
Keywords:
Materials science
Plasma-enhanced chemical vapor deposition
Passivation
Optoelectronics
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