GaN-based MQW light-emitting devices

The GaN-based MQW laser diodes have been improved excellently by introducing GaN/GaInN optical-guiding. The continuous wave laser operation at room temperature has been achieved at the wavelength of 410 nm. The lifetime of room temperature continuous wave operation is longer than 60 minutes at around 1 mW output. The external efficiencies of GaInN/GaN MQW blue and green light emitting diodes (LEDs) have been increased by newly developed flip-chip (FC) type LED lamp structure. The luminous intensities of the FC-type blue and green LEDs were typically 6 cd and 14 cd at 20 mA, respectively. The FC-type blue and green LEDs are the brightest levels in the world currently. The peak wavelengths and full widths at half maximums were typically 464 nm and 27 nm for the blue LEDs, and 515 nm and 32 nm for the green LEDs.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.