90 nm Self-aligned Enhancement-mode InGaAs HEMT for Logic Applications

We have demonstrated 90 nm self-aligned enhancement mode InGaAs HEMTs with outstanding logic figures of merit. The gate-source ohmic separation was reduced to 60 nm, a 20times reduction over conventional designs. Devices in which the barrier was thinned to 5 nm by means of a dry etch had a V T of 60 mV, g m of 1.3 mS/mum, DIBL of 55 mV/V and a SS of 70 m V/dec.