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Characterization of GaN-on-Diamond HEMT fabricated by surface activated bonding
Characterization of GaN-on-Diamond HEMT fabricated by surface activated bonding
2020
Yuki Takiguchi
Shuichi Hiza
Masahiro Fujikawa
Kunihiko Nishimura
Eiji Yagyu
Takashi Matsumae
Yuichi Kurashima
Hideki Takagi
Mikio Yamamuka
Keywords:
Materials science
High-electron-mobility transistor
Optoelectronics
Diamond
Surface activated bonding
Correction
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