Electrical Properties of TaO x Thin Films for ReRAM Prepared by Reactive RF Magnetron Sputtering Method

TaOx thin films were fabricated by O2 reactive Radio Frequency (RF) magnetron sputtering on 8inch substrate using a Ta metal target at room temperature for mass-production of ReRAM. The TaOx thin films had good uniformity (±1%), excellent stability(±1%) at the sputtering process. Ta/TaOx(10nm)/Pt-ReRAM cell was confirmed the bipolar switching and excellent endurance property to 7×108 cycles with large on/off resistance ratio above 1,000 at high speed operation (50nsec, ±3V).