A highly reliable Amorphous Silicon photosensor for above IC CMOS image sensor

The authors report record performances for the reliability of amorphous silicon (a-Si:H) photosensor under high flux illumination. A fully functional VGA (3.0 mum pitch) image sensor, which can withstand 90 suns (= 9 Mlux) during 26 ks, was realized by the optimization of a-Si:H parameters, the pixel structure and the reading voltage