Valley Bosonic Stimulation of Exciton-Polaritons in a Monolayer Semiconductor.

The newly discovered valley degree of freedom (DOF) in atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) offers a promising platform to explore rich nonlinear physics, such as spinor Bose-Einstein condensate (BEC) and novel valleytronics applications. However, the critical nonlinear effect, such as valley polariton bosonic stimulation (BS), has long remained an unresolved challenge due to the generation of limited polariton ground state densities necessary to induce the stimulated scattering of polaritons in specific valleys. Here, we report, for the first time, the valley bosonic stimulation of exciton-polaritons via spin-valley locking in a WS2 monolayer microcavity. This is achieved by the resonant injection of valley polaritons at specific energy and wavevector, which allows spin-polarized polaritons to efficiently populate their ground state and induce a valley-dependent bosonic stimulation. As a result, we observe the nonlinear self-amplification of polariton emission from the valley-dependent ground state. Our finding paves the way for both fundamental study of valley polariton BEC physics and non-linear optoelectronic devices such as spin-dependent parametric oscillators and spin-lasers.