Electrical characterisation of spin-coated a-IZO thin-film transistors

Electrical measurements have been performed on amorphous metal oxide spin-coated thin-film transistors. The conducting layer is amorphous indium zinc oxide (a-IZO) which has been processed at low temperatures. We are looking to improve material and device properties, in particular carrier mobility, using electrical characterisation techniques such as deep-level transient spectroscopy (DLTS) and Hall measurements.