Complementary-FET (CFET) Standard Cell Synthesis Framework for Design and System Technology Co-Optimization Using SMT

With the relentless scaling of technology nodes, design technology co-optimization (DTCO) for the conventional (Conv.) cell structure is starting to reach its limitations due to limited routing resources, lateral p-n separations, and performance requirements. As a result, system technology co-optimization (STCO) has been proposed to exploit the benefits of 3-D architectures. Complementary-FET (CFET) technology, which stacks p-FET on n-FET or vice versa, can release the restriction of p-n separation and reduce in-cell routing congestion by enabling p-n direct connections. However, CFET standard cell (SDC) synthesis demands holistic considerations to maximize the area benefit of scaling at the block level due to the extremely limited routability that comes from the stacked structure and reduced cell height. In this article, we propose a satisfiability modulo theory (SMT)-based CFET SDC synthesis framework that simultaneously solves place-and-route to generate optimized layouts. We first demonstrate that the CFET structure achieves 10.94% and 21.27% reduction on average cell area and metal length, respectively, and 15.10% smaller block-level area compared to Conv. structure as scaling down to 3.5T architecture. For routability, the proposed constraint-based minimum pin length/minimum pin opening and objective-based edge-based pin-separation/M2 track use reduce up to 48% #DRVs at the block level compared to the previous work. Then, through extensive DTCO explorations on ground design rules and #BEOLs, 3.5T CFET SDCs achieve up to 6.50% smaller block-level areas than 4.5T CFET SDCs. Finally, with the assistance of STCO and DTCO, 3.5T CFET SDCs achieve 21.0% on average reduced block-level areas compared to 4.5T Conv. SDCs.