Field-plated GaN HEMTs and amplifiers

Field-plates remarkably enhanced large-signal performance of GaN HEMTs by reducing trapping effect and increasing breakdown voltages. Power densities exceeding 30W/mm at 4GHz were demonstrated with gate-connected field plates. Further development of source-connected field pates boosted large-signal gain by 5-7dB, while maintaining the benefit of the field plates. Short-channel GaN HEMTs with field plates also showed promise at millimeter-wave bands. Amplifiers with 1.08-mm-wide device periphery generated 5W at 35GHz.