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Will strain be useful for 10nm quasi-ballistic FDSOI devices? An experimental study
Will strain be useful for 10nm quasi-ballistic FDSOI devices? An experimental study
2007
V. Barral
Thierry Poiroux
F. Rochette
Maud Vinet
Sylvain Barraud
Olivier Faynot
L. Tosti
François Andrieu
Mikael Cassé
B. Previtali
Romain Ritzenthaler
P. Grosgeorges
Eddie N. Bernard
Gilles Lecarval
Daniela Munteanu
Jean-Luc Autran
Simon Deleonibus
Keywords:
Silicon on insulator
Strain (chemistry)
Materials science
Optoelectronics
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