Crystal lattice defects in MBE grown Si layers highly doped with Er

The structure of Si:Er layers grown by MBE on Si(001) substrates was investigated by transmission electron microscopy. We studied the dependence of the layer structure on the erbium concentration [Er] (8 × 1018 – 4 × 1019 cm–3) as well as the epitaxial growth temperature (400–700 °C). In general, ErSi2 platelets and spherical metallic precipitates are formed during the epitaxial growth through the layer and in the near-interface region, respectively. For [Er] ≥2 × 1019 cm–3, an oscillation of platelet density with periodicity approximately 200–250 nm was observed. A new type of complex structural defect was observed in a specimen with [Er] = 4 × 1019 cm–3. In the layers grown at 400 °C, complexes of extended defects consisting of partial dislocations, stacking faults and twins are generated. The formation of silicides and Er precipitates is accompanied by emission of vacancies, which leads to the formation of pores in the layer. A high concentration of vacancies should also result in formation of V–V and V–Er complexes. The presence of these point-defect complexes can explain the appearance of deep acceptor levels with an activation energy of 360 meV, which can be responsible for nonradiative paths. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)