Deep-Ultraviolet β-Ga2O3 Photodetectors Grown on MgO Substrates with a TiN Template

This work investigates β-Ga 2 O 3 photodetectors grown on MgO substrates with a TiN template, showing peak responsivities of 34.91 and 224.09 A/W at 5 and 15V reverse-bias, respectively, for 250-nm incident-light wavelength. A mesa device structure exhibited a 213.75% peak-responsivity increase at 15 V reverse-bias.