Soft X-ray photoelectron spectroscopy study of Boron doped on top surfaces and sidewalls of Si Fin structures
2012
2D distribution of depth profiling of impurities and their activity/non-activity are very important for development of process technology for nano-scale 3D devices. Si Fin structures doped with Boron (B) were evaluated by soft X-ray photoelectron spectroscopy (SXPES) and a feasibility of detecting the difference were demonstrated between the chemical bonding states as well as concentrations of B on top of Fins and those on sidewall of Fins.
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