Minority carrier transport in p-ZnO nanowires

In this work, we explore the minority carrier diffusion length in zinc oxide nanowires, using the electron beam-induced current technique. Systematic measurements as a function of temperature were performed on p-type, Sb-doped ZnO film, containing a 4 μm thick nanowire layer. The minority carrier diffusion length exhibits a thermally activated increase with the energy of 74±5 meV. Electron beam irradiation also causes the diffusion length increase with the activation energy of 247±10 meV, likely related to SbZn–2VZn acceptor-complex.