Quantitative aspects of optical IC debug using state-of-the-art backside preparation

Backside preparation techniques have advanced to provide reliable IC performance for bulk silicon as thin as 10µm and less (here called moderately thin=MTSi). This opens many doors for optical localization techniques as photons > 1.1 eV can be detected through backside. Now, Si and InGaAs detectors can be compared directly for photon emission (PE) and this paper investigates in depth what is important when it comes to understanding PE spectra. The advantages of Si detectors are demonstrated especially when intensified CCDs are used. The spectra open new doors for characterization of MOSFET channel mobility. In addition, some remarks are made about resonance in absorption and reflectance of laser beams in this IC bulk thickness regime that may affect stimulation or electro optical techniques.