Low noise performance of dry etched InGaAs/InAlAs HEMTs in comparison with wet recessed devices

Lattice-matched InAlAs/InGaAs HEMTs with selectively dry etched and wet etched gate recesses have been fabricated and both high-frequency and noise measurements have been carried out. The modelling of the noise source parameters shows only minor difference between the two transistor types. There is no evidence of detrimental effects caused by dry etching that reduce the noise performance of the device at high frequencies. To our knowledge, this is the first report of low-noise performance for dry etched InP HEMTs.