Modified polybutene-1 film with high dielectric constant based on low doping amount of fluorine-based compound

Abstract In this paper, a C8 perfluoroacrylate/polybutene-1 composite film was prepared by solution casting method. Analysis by FTIR, XRD and SEM shows that C8 perfluoroacrylate has been successfully and uniformly integrated into the matrix polybutene-1, and the crystal structure of the matrix polybutene-1 remains intact without any change. When the content of the filler is very low, local structural changes can occur, resulting in an increase in dielectric constant and breakdown field strength, and can reduce conduction losses at high frequencies. Therefore, at room temperature, when f = 1kHz and the filler content is 0.2wt%, the dielectric constant of the composite film e = 12.81, which is nearly 620 % higher than that of the pure PB-1 film (e = 1.78), and the dielectric loss still remains in tanσ = 0.011, and the composite film storage performance as well as the most excellent Ue = 8.65 J/cm3, which is 8.5 times the energy storage density of the pure PB-1 material (Ue = 1.02 J/cm3). The composite materials in this work show excellent properties such as high dielectric constant, low dielectric loss, and high breakdown field strength, which are prospective in the application of capacitors.