Electrical properties of SiNx films with embedded CNTs for MEMS capacitive switches

Abstract The present paper aims to provide a better insight on the electrical properties of silicon nitride (SiN x ) dielectric films with embedded carbon nanotubes (CNTs) that can be used in RF MEMS capacitive switches. The effect of the embedded CNTs on the leakage current density and on the discharging processes of the films has been probed with the aid of metal-insulator-metal (MIM) capacitors and it has been found that the presence of CNTs results in an increase of leakage current density as well as to an acceleration of the charge displacement through the bulk of the dielectric films. Finally, the charging and discharging processes have been investigated in MEMS capacitive switches and it has been found that the use of CNTs in SiN x films results in an enhancement of charging processes but it also accelerates the discharging process.