The influence of post-etch InGaAs fin profile on electrical performance

The onset of the 22 nm node introduced three dimensional tri-gate transistors into high-volume manufacturing for improved electrostatics. The next generations of fin nMOSFETs are predicted to be InGaAs based. Due to the ternary nature of InGaAs, stoichiometric and structural modifications could affect the electronic properties of the etched fin. In this work we have created InGaAs fins down to 35 nm fin width with atomic surface structure kept nearly identical to that of the bulk. Our experimental and simulation results show the impact of surface stoichiometry and fin profile on electrical performance.