A method of fabricating a semiconductor structure and a semiconductor body

A method of manufacturing a semiconductor structure, the method comprising: Depositing an insulator (1024) over a semiconductor body (10); Depositing a first conductive material (1025) over the insulator (1024); Depositing a Interpolydielektrikumsmaterials (1027) over the first conductive material (1025); Depositing a second conductive material (26) over the Interpolydielektrikumsmaterial (1027); Use of a lithography step for exposing a portion of the second conductive material (26); Etching the exposed portion of the second conductive material (26) to expose a portion (99) of the Interpolydielektrikumsmaterials (1027), wherein the etching is performed in a reactive ion etching chamber using a first gas chemistry, marked by, physical damage to the exposed portion (99) of Interpolydielektrikumsmaterials (1027), wherein said damage in the reactive ion etching is performed using a second gas chemistry and Etching the damaged Interpolydielektrikumsmaterials to expose a portion of the first conductive material (1025).