High mobility w-gate nanowire P-FET on cSGOI substrates obtained by Ge enrichment technique

Ω-gate nanowires (NW) P-FETs on compressively-strained-SiGe-on-insulator (cSGOI) substrate obtained by the Ge enrichment technique are presented. Effectiveness of cSGOI channel is demonstrated for ultra-scaled P-FET NW (L G =15nm and W NW =25nm) with an outstanding I ON current (I ON =860µA/µm at I OFF =140nA/µm) and a good electrostatics immunity (DIBL=110mV/V). For the first time, Si 0.8 Ge 0.2 -channel transistors highlight a mobility improvement for narrow NWs down to short gate length compared to Si one (92% for L G =30nm). The hole mobility improvement provided by the strong uniaxial compressive strain coming from cSiGe and cCESL leads to an ION current improvement of 95% at L G =15nm.