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Record-high Electron Mobility in Sub-nm EOT Ge n-MOSFETs with Y-doped GeO 2 Interfacial Layer
Record-high Electron Mobility in Sub-nm EOT Ge n-MOSFETs with Y-doped GeO 2 Interfacial Layer
2014
Choong-Hyun Lee
Keywords:
Nuclear magnetic resonance
Electron mobility
Doping
Materials science
Optoelectronics
high electron
Correction
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