Blister formation in silicon films during ion beam assisted deposition

Abstract Modification of silicon films on Si (111) and NaCl single crystals has been studied by dual ion beam deposition at room temperature. Marked film decorations with bubbles and blisters were observed by TEM for the films deposited with both heavier argon ion and lighter methane ion bombardment. No noticeable incorporation of bombarding ions was perceived by EDXA and AES analyses. The blisters were found to become intensive with the increase of the current density of the ion beam.