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25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C
25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C
2020
Zhongkai Zhang
Zunren Lu
Xiaoguang Yang
Hongyu Chai
Lei Meng
Tao Yang
Keywords:
Ground state
quantum dot lasers
Molecular beam epitaxy
Optoelectronics
Optics
Semiconductor laser theory
Quantum dot
Materials science
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