Dry etching of bottom anti-reflective-coat and its application to gate length control

Dry etch characteristics of the organic bottom anti-reflective-coat (BARC) are studied and applied to control WSi/sub x/ polycide gate length precisely in quarter micron region, In the plasma of O/sub 2//Cl/sub 2/ gas mixture, CD (critical dimension) control of less than 0.02 /spl mu/m, as well as an infinite selective etching of BARC to WSi/sub x/ film, was established by optimizing O/sub 2/ ratio. This optimized BARC process can be applicable to 0.25 /spl mu/m level devices for increasing the pass chip yield.