A Sensor System Based on a Field-Effect Transistor with a Nanowire Channel for the Quantitative Determination of Thyroid-Stimulating Hormone
2020
Here we present an original CMOS compatible technique for
fabrication a sensor system based on field-effect transistors with
a nanowire channel and its application for the quantitative
determination of thyroid-stimulating hormone (TSH) in model blood
serum. The fabrication process is based on the reactive-ion
etching of the upper layer of silicon on insulator through a mask
formed by electron beam lithography. The detection is based on the
registration the change in the conductivity of the transistor
during the selective interaction of the analyte with specific
biomolecules on its surface. There were fabricated field-effect
transistors with a nanowire channel of $$70{-}90\text{nm}$$
wide
and $$3{-}5 \mu\text{m}$$
in long and a contact leads completely
insulated from the analyte fluid. As the model antigen protein TSH
of the pituitary gland, and as the recognition biomolecules - the
specific to TSH fragments of antibodies were used, which were
oriented immobilized on the nanowires surface. We carefully
studied the conditions for biospecific interaction of antibodies
with TSH. The detection limit of TSH was found to be
$$1\times 10^{-4}\mu\text{IU}/\text{mL}$$
, which is significantly
lower in comparison with currently used methods of standard
enzyme-linked immunosorbent assay.
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