Controlled growth of single crystal films of silicon carbide|includes susceptor to receive substrate, tube to lead gas over and past substrate and heater

Nils Nordell,G. Andersson

Controlled growth of single crystal films of silicon carbide|includes susceptor to receive substrate, tube to lead gas over and past substrate and heater

1995

Nils Nordell
G. Andersson

Controlled growth of single crystal films of silicon carbide|includes susceptor to receive substrate, tube to lead gas over and past substrate and heater

Keywords:

Single crystal
Susceptor
Silicon carbide
Substrate (chemistry)
Composite material
Electronic engineering
Materials science
single crystal film

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