Impacts of Ferroelectric Parameters on the Electrical Characteristics of Fefet for Low-Power Logic and Memory Applications

Considering ferroelectric domain switching dynamics, the influences of ferroelectric (FE) parameters on ferroelectric field-effect transistor (FeFET) characteristics are thoroughly investigated and simulated. It is shown that both remanent polarization and coercive field of FE have non-monotonic relationships with the subthreshold swing (SS) and hysteresis of FeFET. Competition between polarization switching and depolarization effect is found to be the origin of the above phenomenon. Based on the analysis, design guideline of F eFET for both logic and memory applications are reconsidered.