Raman measurements of Ge1−xMnx epilayers

Abstract Raman scattering has been used to characterize Ge 1− x Mn x (0.01 x 3 Mn 5 hexagonal structure was observed at higher Mn concentration in cross-sectional TEM. Micro-Raman spectroscopy was employed to obtain information about the clusters and host material. Two Raman lines were observed significantly below the bulk Ge value suggesting the epilayers had Ge–Mn alloying and/or strain. A saturation in the intensity of the lower energy Raman peak with Mn-fraction suggested there was a maximum Mn incorporation rate of ∼1% with additional Mn accommodated by clustering. Evidence for increased cluster density at higher Mn-fractions were observed in the spatial Raman maps.