Fabrication, electrical and photovoltaic characteristics of CuInGeSe 4 /n-Si diode

The CuInGeSe 4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe 4 /n-Si/Al heterojunction device has been fabricated. The structure of the CuInGeSe 4 thin film was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and energy dispersive X-ray analysis (EDX). The dark current–voltage characteristics of the Au/CuInGeSe 4 /n-Si/Al heterojunction diode have been studied at a temperature range of 303–383 K. Also, the photovoltaic properties were examined at different illumination intensities. The capacitance–voltage characteristics of the CuInGeSe 4 /n-Si heterojunction were studied at different temperatures in the dark.