Crystallization technology for low voltage operated TFT

The authors propose a novel crystallization technology for achieving high on/off current ratio of the bottom gate TFT (thin-film transistor), especially at low operation voltage. A 6 decades on/off current ratio with 3-V gate swing was obtained utilizing this process. A 256k SRAM was fabricated using this technology. It is demonstrated that this technology improves SRAM cell margin drastically, especially at the low operation voltage. >