High operation temperature of HgCdTe photodiodes by bulk defect passivation

Spatial noise and the loss of photogenerated current due material non-uniformities limit the performance of long wavelength infrared (LWIR) HgCdTe detector arrays. Reducing the electrical activity of defects is equivalent to lowering their density, thereby allowing detection and discrimination over longer ranges. Infrared focal plane arrays (IRFPAs) in other spectral bands will also benefit from detectivity and uniformity improvements. Larger signal-to-noise ratios permit either improved accuracy of detection/discrimination when an IRFPA is employed under current operating conditions, or provide similar performance with the IRFPA operating under less stringent conditions such as higher system temperature, increased system jitter or damaged read out integrated circuit (ROIC) wells. The bulk passivation of semiconductors with hydrogen continues to be investigated for its potential to become a tool for the fabrication of high performance devices. Inductively coupled plasmas have been shown to improve the quality and uniformity of semiconductor materials and devices. The retention of the benefits following various aging conditions is discussed here.