Recent progress in LWIR HOT photoconductors based on MOCVD grown (100) HgCdTe

Hg1−x Cd x Te photoconductors grown in (100) crystallographic orientation are prone to demonstrating high crystalline quality, which results in a lower number of generation-recombination centers, lower noise and high responsivity. This work presents the optimum growth conditions and results of the characterization both of layers and high operating temperature (HOT) long wavelength infrared (LWIR) photoconductive devices based on them. The (100) HgCdTe photoconductor attains D*(13 μm) equal to 6.5 × 109 cmHz1/2W−1 at 200 K and therefore outperforms its (111)B counterpart.