Quantum barrier thickness study on blue InGaN LED optical performance using Sentaurus

Blue InGaN LEDs have a drawback whereby it suffers from efficiency droop at high current injection levels. One of the major factors of this droop behaviour is contributed by electron leakage. The aim of this study was to suppress electron leakage in the device by understanding how barrier thickness affects the carrier distribution in the device as well as the device performances. Simulation results obtained showed that thinner barrier increased the device’s efficiency since there was better electron confinement and tunnelling effect.