Optical features of PbBr2 semiconductor thin films for radiation attenuation application

In this work the synthesis by thermal evaporation and optical characterization of the semiconductor thin film lead bromide (PbBr2) is reported, discussing its possible applicability in attenuation of UV radiation and ionizing radiation. In order to show the quality of the samples and their possible application, a series of experimental studies was carried out by means of X-ray diffraction that allowed establishing the crystallinity of the samples and scanning electron microscopy for the study of surface morphology, evidencing a high degree of film coating. Diffuse reflectance and transmittance spectroscopy experiments were used to study the optical properties of the material, finding a weakly semiconductor optical gap of 3.5 eV, which absorbs much of the radiation from a broad spectrum of ultraviolet, from 200 to 350 nm. The high value of the Pb atomic number favors the absorption of high-energy photons, and the mass absorption coefficient as well as the appearance of a doublet of transitions in the PL spectrum in the UV radiation regime, suggest the applicability of PbBr2 in the design of medical diagnostic and treatment equipment that involves ionizing radiation. Additionally, high transparency of the thin film was found as corroborated by the extinction coefficient, which could be useful for applications in microelectronic devices.