Low-frequency 1/f noise in a graphene/silicon X-ray detector

Photodetectors based on graphene attracted widespread attention because of their superior properties. We have evaluated the low-frequency noise of a graphene-based X-ray detector manufactured from graphene oxide (GO) through a laser process. The low-frequency noise's temperature dependence indicates a nonuniform energy distribution of traps in the device due to a distribution of defects and impurities, most likely due to O-vacancies and hydrogen.